Transition metal dichalcogenide monolayers - Wikipedia
Frontiers | Bandgap Engineering and Near-Infrared-II Optical Properties of Monolayer MoS2: A First-Principle Study | Chemistry
Band structure of MoS2 (A) showing the direct and indirect band gap, as... | Download Scientific Diagram
Color online) Electronic band structure and corresponding total and... | Download Scientific Diagram
Bandgap broadening at grain boundaries in single-layer MoS2 | SpringerLink
Atomic–layer–confined multiple quantum wells enabled by monolithic bandgap engineering of transition metal dichalcogenides
Strain-induced semiconductor to metal transition in the two-dimensional honeycomb structure of MoS2 | SpringerLink
Electronic properties of MoS2/MoOx interfaces: Implications in Tunnel Field Effect Transistors and Hole Contacts | Scientific Reports
![PDF] Indirect-to-direct band gap crossover in few-layer MoTe₂. | Semantic Scholar](https://d3i71xaburhd42.cloudfront.net/7916623ea769c2ccd8b2e8b1258e8ecd77bff64a/2-Figure1-1.png "PDF] Indirect-to-direct band gap crossover in few-layer MoTe₂. | Semantic Scholar")
PDF] Indirect-to-direct band gap crossover in few-layer MoTe₂. | Semantic Scholar
Direct bandgap engineering with local biaxial strain in few-layer MoS2 bubbles | SpringerLink
PDF) Atomically Thin MoS 2 : A New Direct-Gap Semiconductor
The fabrication of atomically thin-MoS2 based photoanodes for photoelectrochemical energy conversion and environment remediation: A review - ScienceDirect
Phys. Rev. Lett. 105, 136805 (2010) - Atomically Thin ${\mathrm{MoS}}_{2}$: A New Direct-Gap Semiconductor
Partial Oxidized Arsenene: Emerging Tunable Direct Bandgap Semiconductor | Scientific Reports
High-harmonic generation from an atomically thin semiconductor | Nature Physics
Strain engineering band gap, effective mass and anisotropic Dirac-like cone in monolayer arsenene: AIP Advances: Vol 6, No 3
Directly visualizing the momentum-forbidden dark excitons and their dynamics in atomically thin semiconductors
Strain engineering of 2D semiconductors and graphene: from strain fields to band-structure tuning and photonic applications | Light: Science & Applications
Atomically thin p–n junctions with van der Waals heterointerfaces | Nature Nanotechnology
Bandgap tunability at single-layer molybdenum disulphide grain boundaries | Nature Communications
